P/N + Description + Content Search
Part Name(s) : 2SC2166 C2166
New Jersey Semiconductor
Description : SILICON NPN POWER TRANSISTOR Final RF POWER Output
Part Name(s) : 2SD560 D560
Tiger Electronic
Description : NPN SILICON POWER Ttransistors
Part Name(s) : 2SC2800 C2800
Mitsumi
Description : NPN EPITAXIAL PLANAR TYPE
Part Name(s) : BC635 BC637 BC639
Semtech Electronics LTD.
Description : NPN SILICON EPITAXIAL Planar TRANSISTOR
Part Name(s) : BC635 BC637 BC639
Nanjing International Group Co
Description : NPN SILICON EPITAXIAL Planar TRANSISTOR
Part Name(s) : 2SC3101
eleflow technologies co., ltd.
Description : FOR drive stage and output stage of POWER AMPLIFIERS in UHF band
Part Name(s) : BD130
Comset Semiconductors
Description : NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS (Rev - V2)
Part Name(s) : BFR34A
Siemens AG
Description : NPN SILICON TRANSISTOR FOR Low-Noise RF Broadband AMPLIFIERS
Part Name(s) : 2SC1946
eleflow technologies co., ltd.
Description : 25 watts output POWER ampilflers applications in VHF band
Part Name(s) : 2SC1968 C1968
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC1729 C1729
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC1967
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC1945 C1945
eleflow technologies co., ltd.
Description : 10 to 14 watts output POWER class AB AMPLIFIERS applications in HF band
Part Name(s) : SC1968 2SC1968 C1968
Mitsumi
Description : MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC1966
MITSUBISHI ELECTRIC
Description : MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC3105
MITSUBISHI ELECTRIC
Description : NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)